000 | 00778nam a2200253zi 4500 | ||
---|---|---|---|
005 | 20230201161139.0 | ||
008 | 970106s1984 au 000 0 eng | ||
020 | _a0127569804 | ||
035 | _aMX001000350540 | ||
050 |
_aQC702.I55 _bI58 |
||
245 | 0 | 0 |
_aIon implantation and beam processing / _ced, by J. S. Williams, J. M. Poate |
300 | _a419 páginas | ||
650 | 0 | _aBombardeo iónico | |
650 | 0 | _aHaces electrónicos | |
650 | 0 | _aImplantación de iones | |
650 | 0 | _aSemiconductores impuros | |
700 |
_aPoate, John Milo, _eeditor |
||
700 |
_aWilliams, James Stanislaus, _eeditor |
||
264 | 1 |
_aSydney : _bAcademic, _c1984 |
|
336 |
_atexto _2rdacontent |
||
337 |
_asin medio _2rdamedia |
||
338 |
_avolumen _2rdacarrier |
||
999 |
_c387 _d387 |