| 000 | 00803nam a2200253zi 4500 | ||
|---|---|---|---|
| 005 | 20230201161213.0 | ||
| 008 | 121130s2012 gw a 000 0 eng d | ||
| 020 | _a9783527330324 | ||
| 035 | _aMX001001588881 | ||
| 040 |
_aCaONFJC _bspa _erda _cCaONFJC _dUNAMX |
||
| 050 | 4 |
_aQC585 _bH54 |
|
| 082 | 0 | 4 | _a537/.24 |
| 245 | 0 | 0 |
_aHigh-k gate dielectrics for CMOS technology / _cedited by Gang He and Zhaoqi Sun |
| 300 |
_a558 páginas : _bilustraciones |
||
| 650 | 4 | _aDieléctricos | |
| 650 | 4 | _aSemiconductores complementarios de óxido metálico | |
| 700 | 1 |
_aHe, Gang, _eeditor |
|
| 700 | 1 |
_aSun, Zhaoqi, _eeditor |
|
| 264 | 1 |
_aWeinheim : _bWiley-VCH, _c2012 |
|
| 336 |
_atexto _2rdacontent |
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| 337 |
_asin medio _2rdamedia |
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| 338 |
_avolumen _2rdacarrier |
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| 999 |
_c3537 _d3537 |
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