| 000 | 00839nam a2200253zi 4500 | ||
|---|---|---|---|
| 005 | 20230201161204.0 | ||
| 008 | 030902s2003 xxua 000 0 eng | ||
| 020 | _a047143079X | ||
| 020 | _a9780471430797 | ||
| 035 | _aMX001000970168 | ||
| 040 |
_aDLC _bspa _erda _cDLC _dUNAMX |
||
| 050 | 0 |
_aTK7871.99M44 _bN52 2003 |
|
| 100 | 1 |
_aNicollian, E. H., _eautor |
|
| 245 | 1 | 0 |
_aMos (Metal Oxide Semiconductor) physics and technology / _cE.H. Nicollian, J.R. Brews |
| 250 | _aWiley classics library edition | ||
| 300 |
_axv, 906 páginas : _bilustraciones |
||
| 490 | 0 | _aWiley classics library | |
| 650 | 0 | _aSemiconductores de metal-óxido | |
| 700 | 1 |
_aBrews, J. R., _eautor |
|
| 264 | 1 |
_aHoboken, N.J. : _bWiley-Interscience, _c2003 |
|
| 336 |
_atexto _2rdacontent |
||
| 337 |
_asin medio _2rdamedia |
||
| 999 |
_c2757 _d2757 |
||