| 000 | 01100nam a2200325zi 4500 | ||
|---|---|---|---|
| 003 | $$aDLC | ||
| 005 | 20230201161157.0 | ||
| 008 | 980923s1996 nyu 101 0 eng | ||
| 020 | _a1563965038 | ||
| 035 | _aMX001000802928 | ||
| 040 |
_aDLC _cDLC |
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| 041 | _aENG | ||
| 050 | 0 | 0 |
_aTK7871.85 _bS455 |
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_a621.3815/2 _220 |
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_aSemiconductor characterization : _bpresent status and future needs / _ceditors, W.M. Bullis, D.G. Seiler, A.C. Diebold |
| 263 | _a9610 | ||
| 300 |
_av, 729 páginas : _bilustraciones |
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| 500 | _aIncluye indices | ||
| 650 | 0 |
_aSemiconductores _xCaracterizacion _vCongresos |
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| 650 | 0 |
_aSemiconductores _xDiseño y construccion _vCongresos |
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| 700 | 1 |
_aBullis, W. Murray, _d1930- , _eeditor |
|
| 700 | 1 |
_aSeiler, David G., _eeditor |
|
| 700 | 1 |
_aDiebold, A. C. _q(Alain C.), _eeditor |
|
| 710 | 2 | _aAmerican Institute of Physics | |
| 264 | 1 |
_aWoodbury, New York : _bAmerican Institute of Physics, _c1996 |
|
| 336 |
_atexto _2rdacontent |
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| 337 |
_asin medio _2rdamedia |
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| 338 |
_avolumen _2rdacarrier |
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_c2128 _d2128 |
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