| 000 | 00789nam a2200253zi 4500 | ||
|---|---|---|---|
| 005 | 20230201161157.0 | ||
| 008 | 980921s1985 nyua b 00100 eng | ||
| 020 | _a0306418606 | ||
| 035 | _aMX001000802147 | ||
| 041 | _aENG | ||
| 050 | 0 |
_aQC611.6M64 _bT43 |
|
| 082 | 0 |
_a621.3815/2 _219 |
|
| 245 | 0 | 4 |
_aThe Technology and physics of molecular beam epitaxy / _cedited by E.H.C. Parker |
| 300 |
_axx, 686 páginas : _bilustraciones ; |
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| 504 | _aIncludes bibliographies and index. | ||
| 650 | 0 | _aEpitaxia de haces moleculares | |
| 650 | 0 | _aSemiconductores | |
| 700 | 1 | 0 |
_aParker, E. H. C., _eeditor |
| 264 | 1 |
_aNew York : _bPlenum, _cc1985 |
|
| 336 |
_atexto _2rdacontent |
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| 337 |
_asin medio _2rdamedia |
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| 338 |
_avolumen _2rdacarrier |
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| 999 |
_c2114 _d2114 |
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